r 201510b 1/7 npn ? npn epitaxial silicon transistor 3dg3904 order codes ? marking halogen free ? package ? packaging 3dg3904-o-t-n-c 3904 no to-92 ? bag 3DG3904-O-T-N-A 3904 no to-92 brede 3dg3904-o-n1-n-a i no sot-23 brede ? main characteristics i c 0.2a v ceo 40v p c (to-92) 0.625w p c (sot-23) 0.350w ? package sot-23 to-92 ? z ??? z ?? z ???? applications z high frequency switching powe r supply z high frequency power transform z commonly power amplifier circui t ? z z ?? z 3cg3906 z rohs? features z epitaxial silicon z high switching speed z complementary to 3cg3906 z rohs product ? order message
r 3dg3904 201510b 2/7 ?? absolute ratings (tc=25 ) electrical characteristic thermal characteristic ? parameter symbol ? value(min) ? value(max) unit ? to-92 thermal resistance junction ambient to-92 r th(j- a ) - 125 /w ? sot-23 thermal resistance junction ambient sot-23 r th(j- a ) - 357 /w ? parameter symbol ? value unit ? ?? collector- base voltage i e =0 v cbo 60 v ? ?? collector- emitter voltage i b =0 v ceo 40 v ? ?? emitter-base voltage i c =0 v ebo 6 v ??? collector current dc i c 0.2 a ??? total dissipation (to-92) p c 0.625 w ??? total dissipation (sot-23) p c 0.350 w ? junction temperature t j 150 ? storage temperature t stg -55~+150 ? parameter tests conditions ? value(min) ? value(typ) ? value(max) unit v (br) cbo i c =10ua,i e =0 60 - - v v (br) ceo i c =1ma,i b =0 40 - - v v (br) ebo i e =10ua,i c =0 6 - - v i cbo v cb =30v, i e =0 - - 50 na i ebo v eb =4v, i c =0 - - 50 na hfe(1) v ce =1v, i c =0.1ma 40 hfe(2) v ce =1v, i c =1ma 70 hfe(3) v ce =1v, i c =10ma 100 200 300 hfe(4) v ce =1v, i c =50ma 60 hfe(5) v ce =1v, i c =100ma 30 i c =10ma, i b =1ma - - 0.2 v v ce(sat) i c =50ma, i b =5ma - - 0.3 v i c =10ma, i b =1ma - - 0.85 v v be(sat) i c =50ma, i b =5ma - - 0.95 v f t v ce =10v, i c =50ma 300 - mhz
r 3dg3904 201510b 3/7 electrical characteristics (curves) 1e-3 0.01 0.1 1 2 25 125 ic/ib=10 vbesat(v) ic(a) 1e-3 0.01 0.1 0.1 0.2 0.3 0.4 25 125 ic/ib=10 vcesat(v) ic(a) 1e-4 1e-3 0.01 0.1 10 100 25 125 vce=5v hfe ic(a) power derating factor hfe ? i c v be sat - i c v ce(sat) - i c p c -t c
r 3dg3904 201510b 4/7 ? package mechanical data to-92 unit mm symbol ?? mm size mm a 3.30-3.90 b 0.35-0.55 c 0.31-0.51 d 4.30-4.90 e 4.30-4.90 e 1.17-1.37 l 12.50-15.50 q1 0.85-1.00 symbol ?? mm size mm a 4.30-4.90 a1 4.30-4.90 a2 3.30-3.90 c typ 0.45 f1/f2 2.20-2.80 w1 17.5-18.5 w2 5.50-6.50 h1 22.0-27.0 h2 18.0-20.0 h3 15.0-17.0 h4 8.50-9.50 p1 12.5-12.9 p2 6.00-6.70 p3 12.5-12.9 t 0.40-0.45 d 3.80-4.20 h 0.00-1.00
r 3dg3904 201510b 5/7 ? package mechanical data sot-23 unit mm
r 3dg3904 201510b 6/7 ? appendix ?? revision history date ? last rev. new rev. ? description of changes 2015-9-18 201509a 2015-10-29 201509a 201510b ? ft ? 1. ?????????? ?????? ??? 2. ?????? ? 3. ????? ????? 4. ??? note 1. jilin sino-microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don?t be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino-microelectronics co., ltd reserves the right to make changes in this. specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86-432-64678411 86-432-64665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86-432-64675588 64675688 64678411 : 86-432-64671533 contact jilin sino-microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 te l 86-432-64678411 fax 86-432-64665812 web site www.hwdz.com.cn market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86-432-64675588 64675688 64678411 fax: 86-432-64671533
r 3dg3904 201510b 7/7 i f v s v f i f vs v f i f v s v f i f vs v f
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